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Henini 1.pdf

...Semicond. Sci. Technol. 7 (1992) 267-270. Printed in the UK LETTER TO THE EDITOR Molecular beam epitaxy growth of GaAs/ AlAs double-barrier resonant tunnelling devices on (31 l)A substrates M Heninit, R K Haydent, E C Valadarest, L Eaves?, G Hill$ and M A Patet t Department of Physics,...

Leadbeater 3.pdf

...J. Phys.: Condens. Matter l(1989) 10605-10611. Printedin the UK LETTER TO THE EDITOR Observation of space-charge build-up and thermalisation in an asymmetric double-barrier resonant tunnelling structure M L Leadbeater, E S Alves, F W Sheard, L Eaves, M Henini, 0 H Hughes and G A Toombs ...

Martin 1.pdf

...Semicond. Sci. Technol. 7 (1992) 8456-8459. Printed in the UK ~~ Resonant mag netot u n n el I i ng of electrons and holes in a p-i-n diode device incorporating a double barrier structure P M Martint, R K Haydent, C R H Whitet, M Heninit. L Eavest, D K Maude$, J C PortalS. G Hill§ and...

Henini 1.pdf

...J. Phys.: Condens. Matter 1 (1989) 3025-3030. Printed in the UK LETTER TO THE EDITOR Ballistic transport in resonant tunnelling devices with wide quantum wells M Henini, M L Leadbeater, E S Alves, L Eaves and 0 H Hughes Department of Physics, University of Nottingham, Nottingham NG7 2RD, U...

Maes_JCG(2003).pdf

...Journal of Crystal Growth 251 (2003) 186–191 Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantumdots J. Maesa,*, M. Heninib , M. Haynea , A. Patane" b , F. Pulizzib , L. Eavesb , P.C. Mainb , V.V. Moshchalkova aLaboratorium vo...

Hayden 1.pdf

...Semicond. Sci. Technol. 9 (1994) 296-309. Printed in the UK Probing the anisotropic dispersion of hole I states in (1 00) and (31 l)A AIAs/GaAs/AIAs I quantum wells R K Haydent$, L Eaves?, M Heninit, E C Valadaresf', 0 KuhnS, D K Maude§, J C Portals, T TakamasuII, N Miurajl and U Eken...

Leadbeater 1.pdf

...Solid-State Electronics Vol. 32, No. 12, pp. 1467-1471, 1989 0038-1101/89 $3.00+0.00 Printed in Great Britain. All rights reserved Copyright © 1989 Pergamon Press plc INVERTED BISTABILITY IN THE CI~RENT-VOLTAGE CHARACTERISTICS OF A RESONANT TUNNELING DEVICE M. L. Leadbeater*, L. Eaves*, M. ...

Foster 1.pdf

...Solid-State Electronics Vol. 32, No. 12, pp. 1731-1735, 1989 0038-1101/89 $3.00+0.00 Printed in Great Britain. All rights reserved Copyright © 1989 Pergamon Pre-~ pie THE EFFECT OF THE X CONDUCTION BAND MINIMA ON RESONANT TUNNELLING AND CHARGE BUILD-UP IN DOUBLE BARRIER STRUCTURES BASED ON n-...

Main 1.pdf

...Physica B 189 (1993) 125-134 North-Holland SDI: 0921-4526(93)E0017-T PHYSICAl Transport in sub-micron resonant tunnelling devices P.C. Main, P.H. Beton, M.W. Dellow, L. Eaves, T.J. Foster, C.J.G.M. Langerak, M. Henini and J.W. Sakai Department of Physics, University of Nottingham, Nott...

21_Popov.pdf

...Physica E 136 (2022) 115019 Available online 30 October 2021 1386-9477/© 2021 Elsevier B.V. All rights reserved. Contents lists available at ScienceDirect Physica E: Low-dimensional Systems and Nanostructures journal homepage: www.elsevier.com/locate/physe Transformation of polarons into magn...
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