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T., 2017. Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. 63(2), 25-39 CHO YJ, SUMMERFIELD A, DAVIES A, CHENG TS, SMITH EF, MELLOR CJ, KHLOBYSTOV AN, FOXON CT, EAVES L, BETON PH and NOVIKOV SV, 2017. Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Scientific reports. 7, 46799 ALBAR JD, SUMMERFIELD A, CHENG TS, DAVIES A, SMITH EF, KHLOBYSTOV AN, MELLOR CJ, TANIGUCHI T, WATANABE K, FOXON CT, EAVES L, BETON PH and NOVIKOV SV, 2017. An atomic carbon source for high temperature molecular beam epitaxy of graphene. Scientific reports. 7(1), 6598 SUMMERFIELD, ALEX, DAVIES, ANDREW, CHENG, TIN S., KOROLKOV, VLADIMIR V., CHO, YONGJIN, MELLOR, CHRISTOPHER J., FOXON, C. THOMAS, KHLOBYSTOV, ANDREI N., WATANABE, KENJI, TANIGUCHI, TAKASHI, EAVES, LAURENCE, NOVIKOV, SERGEI V. and BETON, PETER H., 2016. Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy SCIENTIFIC REPORTS. 6, CHENG, TIN S., DAVIES, ANDREW, SUMMERFIELD, ALEX, CHO, YONGJIN, CEBULA, IZABELA, HILL, RICHARD J. A., MELLOR, CHRISTOPHER J., KHLOBYSTOV, ANDREI N., TANIGUCHI, TAKASHI, WATANABE, KENJI, BETON, PETER H., FOXON, C. THOMAS, EAVES, LAURENCE and NOVIKOV, SERGEI V., 2016. High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 34(2), NOVIKOV, SERGEI V., STADDON, CHRIS R., WHALE, JOSH, KENT, ANTHONY J. and FOXON, C. THOMAS, 2016. Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 34(2), JIMENEZ RIOBOO, RAFAEL J., CUSCO, RAMON, PRIETO, CARLOS, KOPITTKE, CAROLINE, NOVIKOV, SERGEI V. and ARTUS, LUIS, 2016. Surface acoustic wave velocity and elastic constants of cubic GaN APPLIED PHYSICS EXPRESS. 9(6), 61001-61001 QIAN, H., LEE, K. B., VAJARGAH, S. HOSSEINI, NOVIKOV, S. V., GUINEY, I., ZHANG, S., ZAIDI, Z. H., JIANG, S., WALLIS, D. J., FOXON, C. T., HUMPHREYS, C. J. and HOUSTON, P. A., 2016. Characterization of p-GaN1-xAsx/n-GaN PN junction diodes SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 31(6), 65020-65020 SUMMERFIELD A, DAVIES A, CHENG TS, KOROLKOV VV, CHO YJ, MELLOR CJ, FOXON CT, KHLOBYSTOV AN, WATANABE K, TANIGUCHI T, EAVES L, NOVIKOV SV and BETON PH, 2016. Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. Scientific reports. 6, 27047 NOVIKOV, S. V., STADDON, C. R., SAHONTA, S. -L., OLIVER, R. A., HUMPHREYS, C. J. and FOXON, C. T., 2016. Growth of free-standing bulk wurtzite AlxGa1-xN layers by molecular beam epitaxy using a highly efficient RF plasma source JOURNAL OF CRYSTAL GROWTH. 456, 151-154 NOVIKOV, S. V., STADDON, C. R., SAHONTA, S. -L., OLIVER, R. A., HUMPHREYS, C. J. and FOXON, C. T., 2016. Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6. 13(5-6), 217-220 YU, K. M., SARNEY, W. L., NOVIKOV, S. V., SEGERCRANTZ, N., TING, M., SHAW, M., SVENSSON, S. P., MARTIN, R. W., WALUKIEWICZ, W. and FOXON, C. T., 2016. Highly mismatched GaN1-xSbx alloys: synthesis, structure and electronic properties SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 31(8), GOHIL, T., WHALE, J., LIOLIOU, G., NOVIKOV, S. V., FOXON, C. T., KENT, A. J. and BARNETT, A. M., 2016. X-ray detection with zinc-blende (cubic) GaN Schottky diodes SCIENTIFIC REPORTS. 6, CHO, YONG-JIN, SUMMERFIELD, ALEX, DAVIES, ANDREW, CHENG, TIN S., SMITH, EMILY F., MELLOR, CHRISTOPHER J., KHLOBYSTOV, ANDREI N., FOXON, C. THOMAS, EAVES, LAURENCE, BETON, PETER H. and NOVIKOV, SERGEI V., 2016. 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Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy JOURNAL OF CRYSTAL GROWTH. 425, 2-4 CUSCO, R., DOMENECH-AMADOR, N., NOVIKOV, S., FOXON, C. T. and ARTUS, L., 2015. Anharmonic phonon decay in cubic GaN PHYSICAL REVIEW B. 92(7), WEBSTER, R. F., SOUNDARARAJAH, Q. Y., GRIFFITHS, I. J., CHERNS, D., NOVIKOV, S. V. and FOXON, C. T., 2015. Microstructure of InxGa1-xN nanorods grown by molecular beam epitaxy SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 30(11), SEGERCRANTZ, N., YU, K. M., TING, M., SARNEY, W. L., SVENSSON, S. P., NOVIKOV, S. V., FOXON, C. T. and WALUKIEWICZ, W., 2015. Electronic band structure of highly mismatched GaN1-xSbx alloys in a broad composition range APPLIED PHYSICS LETTERS. 107(14), YU, K. M., TING, MIN, NOVIKOV, S. V., COLLIN, CLEMENT, SARNEY, W. L., SVENSSON, S. P., LUCE, A. V., DENLINGER, J. D., WALUKIEWICZ, W. and FOXON, C. T., 2015. Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride JOURNAL OF PHYSICS D-APPLIED PHYSICS. 48(38), WAHEEDA, S. N., ZAINAL, N., HASSAN, Z., NOVIKOV, S. V., AKIMOV, A. V. and KENT, A. J., 2014. Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers APPLIED SURFACE SCIENCE. 317, 1010-1014 LEE, S. C., NG, S. S., ABU HASSAN, H., HASSAN, Z., ZAINAL, N., NOVIKOV, S. V., FOXON, C. T. and KENT, A. J., 2014. Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy MATERIALS CHEMISTRY AND PHYSICS. 146(1-2), 121-128 NOVIKOV, S. V., POWELL, R. E. L., STADDON, C. R., KENT, A. J. and FOXON, C. T., 2014. Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH. 403, 43-47 POWELL, R. E. L., NOVIKOV, S. V., FOXON, C. T., AKIMOV, A. V. and KENT, A. J., 2014. Photoluminescence of magnesium and silicon doped cubic GaN PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4. 11(3-4), 385-388 SHAW, M., YU, K. M., TING, M., POWELL, R. E. L., SARNEY, W. L., SVENSSON, S. P., KENT, A. J., WALUKIEWICZ, W., FOXON, C. T., NOVIKOV, S. V. and MARTIN, R. W., 2014. Composition and optical properties of dilute-Sb GaN1-xSbx highly mismatched alloys grown by MBE JOURNAL OF PHYSICS D-APPLIED PHYSICS. 47(46), GOFF, L. E., POWELL, R. E. L., KENT, A. J., FOXON, C. T., NOVIKOV, S. V., WEBSTER, R. and CHERNS, D., 2014. Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates JOURNAL OF CRYSTAL GROWTH. 386, 135-138 CHERNS, D., WEBSTER, R. F., NOVIKOV, S. V., FOXON, C. T., FISCHER, A. M., PONCE, F. A. and HAIGH, S. J., 2014. Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy NANOTECHNOLOGY. 25(21), NOVIKOV, S. V., TING, M., YU, K. M., SARNEY, W. L., MARTIN, R. W., SVENSSON, S. P., WALUKIEWICZ, W. and FOXON, C. T., 2014. Tellurium n-type doping of highly mismatched amorphous GaNi1-xAsx alloys in plasma-assisted molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH. 404, 9-13 MOEREKE, JANINA, UREN, MICHAEL J., NOVIKOV, SERGEI V., FOXON, C. THOMAS, VAJARGAH, SHAHRZAD HOSSEINI, WALLIS, DAVID J., HUMPHREYS, COLIN J., HAIGH, SARAH J., AL-KHALIDI, ABDULLAH, WASIGE, EDWARD, THAYNE, IAIN and KUBALL, MARTIN, 2014. Investigation of the GaN-on-GaAs interface for vertical power device applications JOURNAL OF APPLIED PHYSICS. 116(1), WEBSTER, RICHARD F., CHERNS, DAVID, NOVIKOV, SERGEI V. and FOXON, C. THOMAS, 2014. Transmission electron microscopy of indium gallium nitride nanorods grown by molecular beam epitaxy PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4. 11(3-4), 417-420 YU, K. M., NOVIKOV, S. V., TING, MIN, SARNEY, W. L., SVENSSON, S. P., SHAW, M., MARTIN, R. W., WALUKIEWICZ, W. and FOXON, C. T., 2014. Growth and characterization of highly mismatched GaN1-xSbx alloys JOURNAL OF APPLIED PHYSICS. 116(12), SARNEY, W. L., SVENSSON, S. P., NOVIKOV, S. V., YU, K. M., WALUKIEWICZ, W. and FOXON, C. T., 2013. GaN1-xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions JOURNAL OF CRYSTAL GROWTH. 383, 95-99 CHERNS, D., WEBSTER, R. F., NOVIKOV, S. V., FOXON, C. T., FISCHER, A. M. and PONCE, F. A., 2013. The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays JOURNAL OF CRYSTAL GROWTH. 384, 55-60 NOVIKOV, SERGEI V., YU, KIN M., LEVANDER, ALEJANDRO, DETERT, DOUGLAS, SARNEY, WENDY L., LILIENTAL-WEBER, ZUZANNA, SHAW, MARTIN, MARTIN, ROBERT W., SVENSSON, STEFAN P., WALUKIEWICZ, WLADEK and FOXON, C. THOMAS, 2013. Molecular beam epitaxy of highly mismatched N-rich GaN1-xSbx and InN1-xAsx alloys JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 31(3), LEVANDER, A. X., YU, K. M., NOVIKOV, S. V., LILIENTAL-WEBER, Z., FOXON, C. T., DUBON, O. D., WU, J. and WALUKIEWICZ, W., 2013. Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range JOURNAL OF APPLIED PHYSICS. 113(24), NOVIKOV, S. V. and FOXON, C. T., 2013. Plasma-assisted electroepitaxy of GaN layers PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3. 10(3), 388-391 LILIENTAL-WEBER, Z., DOS REIS, R., NOVIKOV, S. V., YU, K. M., LEVANDER, A. X., DUBON, O. D., WU, J., WALUKIEWICZ, W. and FOXON, C. T., 2013. Microstructure of Mg doped GaNAs alloys PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3. 10(3), 453-456 YU, K. M., SARNEY, W. L., NOVIKOV, S. V., DETERT, D., ZHAO, R., DENLINGER, J. D., SVENSSON, S. P., DUBON, O. D., WALUKIEWICZ, W. and FOXON, C. T., 2013. Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxy APPLIED PHYSICS LETTERS. 102(10), SALES, DL, GUERRERO, E, RODRIGO, JF, GALINDO, PL, YANEZ, A, SHAFI, M, KHATAB, A, MARI, RH, HENINI, M, NOVIKOV, S, CHISHOLM, MF and MOLINA, SI, 2011. Distribution Of Bismuth Atoms In Epitaxial Gaasbi Applied Physics Letters. 98(10), - NOVIKOV, SV, STADDON, CR, KENT, AJ and FOXON, CT, 2011. Plasma-Assisted Electroepitaxy As A Method For The Growth Of Gan Layers Journal Of Crystal Growth. 316(1), 51-55 LEVANDER, AX, LILIENTAL-WEBER, Z, BROESLER, R, HAWKRIDGE, ME, NOVIKOV, SV, FOXON, CT, DUBON, OD, WU, J, WALUKIEWICZ, W and YU, KM, 2011. Thermal Stability Of Amorphous Gan1-Xasx Alloys Applied Physics Letters. 98(16), - NOVIKOV, SV, STADDON, CR, POWELL, REL, AKIMOV, AV, LUCKERT, F, EDWARDS, PR, MARTIN, RW, KENT, AJ and FOXON, CT, 2011. Wurtzite Alxga1-Xn Bulk Crystals Grown By Molecular Beam Epitaxy Journal Of Crystal Growth. 322(1), 23-26 NOVIKOV, SV, STADDON, CR, FOXON, CT, LUCKERT, F, EDWARDS, PR, MARTIN, RW and KENT, AJ, 2011. Molecular Beam Epitaxy As A Method For The Growth Of Free-Standing Bulk Zinc-Blende Gan And Algan Crystals NOVIKOV, SV, STADDON, CR, FOXON, CT, YU, KM, BROESLER, R, HAWKRIDGE, M, LILIENTAL-WEBER, Z, DENLINGER, J, DEMCHENKO, I, LUCKERT, F, EDWARDS, PR, MARTIN, RW and WALUKIEWICZ, W, 2011. Growth By Molecular Beam Epitaxy Of Amorphous And Crystalline Ganas Alloys With Band Gaps From 3.4 To 0.8 Ev For Solar Energy Conversion Devices POWELL, REL, NOVIKOV, SV, LUCKERT, F, EDWARDS, PR, AKIMOV, AV, FOXON, CT, MARTIN, RW and KENT, AJ, 2011. Carrier Localization And Related Photoluminescence In Cubic Algan Epilayers Journal Of Applied Physics. 110(6), 063517 LEVANDER, A.X., NOVIKOV, S.V., LILIENTAL-WEBER, Z., DOS REIS, R., DUBON, O.D., WU, J., FOXON, C.T., YU, K.M. and WALUKIEWICZ, W., 2011. Doping of GaN1−xAsx with high As content Journal of Applied Physics. 110(9), 093702 LEVANDER, AX, NOVIKOV, SV, LILIENTAL-WEBER, Z, DOS REIS, R, DENLINGER, JD, WU, JQ, DUBON, OD, FOXON, CT, YU, KM and WALUKIEWICZ, W, 2011. Growth And Transport Properties Of P-Type Ganbi Alloys Journal Of Materials Research. 26(23), 2887-2894 RODRIGO, JF, SALES, DL, SHAFI, M, HENINI, M, TURYANSKA, L, NOVIKOV, S and MOLINA, SI, 2010. Effect Of Annealing On The Structural And Optical Properties Of (311)B Gaasbi Layers NOVIKOV, SV, STADDON, CR, FOXON, CT, YU, KM, BROESLER, R, HAWKRIDGE, M, LILIENTAL-WEBER, Z, WALUKIEWICZ, W, DENLINGER, J and DEMCHENKO, I, 2010. Molecular Beam Epitaxy Of Ganas Alloys With High As Content For Potential Photoanode Applications In Hydrogen Production NOVIKOV, SV, ZAINAL, N, AKIMOV, AV, STADDON, CR, KENT, AJ and FOXON, CT, 2010. Molecular Beam Epitaxy As A Method For The Growth Of Freestanding Zinc-Blende (Cubic) Gan Layers And Substrates ZAINAL, N., NOVIKOV, S.V., MELLOR, C.J., FOXON, C.T. and KENT, A.J., 2010. Current-voltage characteristics of zinc-blende (cubic) AI0.3Ga0.7N/GaN double barrier resonant tunneling diodes Applied Physics Letters. 97(11), 112102 LEVANDER, A.X., YU, K.M., NOVIKOV, S.V., TSENG, A., FOXON, C.T., DUBON, O.D., WU, J. and WALUKIEWICZ, W., 2010. GaN1−xBix: extremely mismatched semiconductor alloys Applied Physics Letters. 97(14), 141919 YU, K.M., NOVIKOV, S.V., BROESLER, R., LILIENTAL-WEBER, Z., LEVANDER, A.X., KAO, V.M., DUBON, O.D., WU, J., WALUKIEWICZ, W. and FOXON, C.T., 2010. Low gap amorphous GaN1−xAsx alloys grown on glass substrate Applied Physics Letters. 97(10), 101906 MARTI, A, TABLERO, C, ANTOLIN, E, LUQUE, A, CAMPION, RP, NOVIKOV, SV and FOXON, CT, 2009. Potential Of Mn Doped In1-Xgaxn For Implementing Intermediate Band Solar Cells Solar Energy Materials And Solar Cells. 93(5), 641-644 HALL, JL, MORAM, MA, SANCHEZ, A, NOVIKOV, SV, KENT, AJ, FOXON, CT, HUMPHREYS, CJ and CAMPION, RP, 2009. Growth Of Scn Epitaxial Films By Plasma-Assisted Molecular Beam Epitaxy Journal Of Crystal Growth. 311(7), 2054-2057 MOSS, D, AKIMOV, AV, NOVIKOV, SV, CAMPION, RP, STADDON, CR, ZAINAL, N, FOXON, CT and KENT, AJ, 2009. Elasto-Optical Properties Of Zinc-Blende (Cubic) Gan Measured By Picosecond Acoustics Journal Of Physics D-Applied Physics. 42(11), - FOXON, CT, NOVIKOV, SV, HALL, JL, CAMPION, RP, CHERNS, D, GRIFFITHS, I and KHONGPHETSAK, S, 2009. A Complementary Geometric Model For The Growth Of Gan Nanocolumns Prepared By Plasma-Assisted Molecular Beam Epitaxy Journal Of Crystal Growth. 311(13), 3423-3427 NOVIKOV, SV, STADDON, CR, AKIMOV, AV, CAMPION, RP, ZAINAL, N, KENT, AJ, FOXON, CT, CHEN, CH, YU, KM and WALUKIEWICZ, W, 2009. Molecular Beam Epitaxy Of Crystalline And Amorphous Gan Layers With High As Content Journal Of Crystal Growth. 311(13), 3417-3422 ALARCON-LLADO, E, IBANEZ, J, CUSCO, R, ARTUS, L, NOVIKOV, SV and FOXON, CT, 2009. Raman Scattering Study Of Cubic Gan And Gamnn Epilayers Grown By Plasma- Assisted Molecular Beam Epitaxy Semiconductor Science And Technology. 24(11), - YU, K.M., NOVIKOV, S.V., BROESLER, R., DEMCHENKO, I.N., DENLINGER, J.D., LILIENTAL-WEBER, Z., LUCKERT, F., MARTIN, R.W., WALUKIEWICZ, W. and FOXON, C.T., 2009. Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range Journal of Applied Physics. 106(10), 103709 KUDRAWIEC, R, POLOCZEK, P, MISIEWICZ, J, SHAFI, M, IBANEZ, J, MARI, RH, HENINI, M, SCHMIDBAUER, M, NOVIKOV, SV, TURYANSKA, L, MOLINA, SI, SALES, DL and CHISHOLM, MF, 2009. Photomodulated Transmittance Of Gabias Layers Grown On (001) And (311)B Gaas Substrates KUDRAWIEC, R, SYPEREK, M, POLOCZEK, P, MISIEWICZ, J, MARI, RH, SHAFI, M, HENINI, M, GOBATO, YG, NOVIKOV, SV, IBANEZ, J, SCHMIDBAUER, M and MOLINA, SI, 2009. Carrier Localization In Gabias Probed By Photomodulated Transmittance And Photoluminescence Journal Of Applied Physics. 106(2), - NOVIKOV, SV, STANTON, NM, CAMPION, RP, MORRIS, RD, GEEN, HL, FOXON, CT and KENT, AJ, 2008. Growth And Characterization Of Free-Standing Zinc-Blende (Cubic) Gan Layers And Substrates Semiconductor Science And Technology. 23(1), - CHERNS, D., MESHI, L., GRIFFITHS, I., KHONGPHETSAK, S., NOVIKOV, S.V., FARLEY, N., CAMPION, R.P. and FOXON, C.T., 2008. Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers Applied Physics Letters. 92(12), 121902 MORAM, MA, NOVIKOV, SV, KENT, AJ, NORENBERG, C, FOXON, CT and HUMPHREYS, CJ, 2008. Growth Of Epitaxial Thin Films Of Scandium Nitride On 100-Oriented Silicon Journal Of Crystal Growth. 310(11), 2746-2750 IBANEZ, J, HERNANDEZ, S, ALARCON-LLADO, E, CUSCO, R, ARTUS, L, NOVIKOV, SV, FOXON, CT and CALLEJA, E, 2008. Far-Infrared Transmission In Gan, Aln, And Algan Thin Films Grown By Molecular Beam Epitaxy Journal Of Applied Physics. 104(3), - CHERNS, D., MESHI, L., GRIFFITHS, I., KHONGPHETSAK, S., NOVIKOV, S.V., FARLEY, N.R.S., CAMPION, R.P. and FOXON, C.T., 2008. Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy Applied Physics Letters. 93(11), 111911 HORAK, L, HOLY, V, STADDON, CR, FARLEY, NRS, NOVIKOV, SV, CAMPION, RP and FOXON, CT, 2008. X-Ray In-Plane Scattering Investigation Of Gan Nanorods Journal Of Applied Physics. 104(10), - HAN, Y, FAY, MW, BROWN, PD, NOVIKOV, SV, EDMONDS, KW, GALLAGHER, BL, CAMPION, RP and FOXON, CT, 2007. Microstructural Characterization Of Low-Temperature Grown Gamnn On Gaas(001) Substrates By Plasma-Assisted Mbe Semiconductor Science And Technology. 22(10), 1131-1139 IBANEZ, J, PASTOR, D, ALARCON-LLADO, E, CUSCO, R, ARTUS, L, NOVIKOV, SV and FOXON, CT, 2007. Raman Scattering Study Of Undoped And As-Doped Gan Grown With Different Iii/V Ratios Semiconductor Science And Technology. 22(10), 1145-1150 FREEMAN, AA, EDMONDS, KW, FARLEY, NRS, NOVIKOV, SV, CAMPION, RP, FOXON, CT, GALLAGHER, BL, SARIGIANNIDOU, E and VAN DER LAAN, G, 2007. Depth Dependence Of The Mn Valence And Mn-Mn Coupling In (Ga,Mn)N Physical Review B. 76(8), - FOXON, CT, CAMPION, RP, GRANT, VA, NOVIKOV, SV, HARRIS, JJ, THOMSON, R, TAYLOR, C and BARLETT, D, 2007. Use Of Band-Gap Thermometry To Investigate The Growth Of Gan On Sapphire And Gaas HENINI, M, IBANEZ, J, SCHMIDBAUER, M, SHAFI, M, NOVIKOV, SV, TURYANSKA, L, MOLINA, SI, SALES, DL, CHISHOLM, MF and MISIEWICZ, J, 2007. Molecular Beam Epitaxy Of Gabias On (311)B Gaas Substrates Applied Physics Letters. 91(25), - HE, B, ZHANG, XY, WEI, SQ, OYANAGI, H, NOVIKOV, SV, EDMONDS, KW, FOXON, CT, ZHOU, GE and JIA, YB, 2006. Local Structure Around Mn Atoms In Cubic (Ga,Mn)N Thin Films Probed By Fluorescence Extended X-Ray Absorption Fine Structure Applied Physics Letters. 88(5), - MARTINEZ, C.E., STANTON, N.M., WALKER, P.M., KENT, A.J., NOVIKOV, S.V. and FOXON, C.T., 2005. Generation of terahertz monochromatic acoustic phonon pulses by femtosecond optical excitation of a gallium nitride/aluminium nitride superlattice Applied Physics Letters. 86(22), 221915 EDMONDS, K.W., NOVIKOV, S.V., SAWICKI, M., CAMPION, R.P., STADDON, C.R., GIDDINGS, A.D., ZHAO, L.X., WANG, K.Y., DIETL, T., FOXON, C.T. and GALLAGHER B.L., 2005. p-type conductivity in cubic (Ga,Mn)N thin films Applied Physics Letters. VOL 86(NUMB 15), 152114/1-3 FOXON, C. T., NOVIKOV, S. V., ZHAO, L. X., EDMONDS, K. W., GIDDINGS, A. D., WANG, K. Y., CAMPION, R. P., STADDON, C. R., FAY, M. W. and HAN, Y., 2005. Molecular beam epitaxy of p-type cubic GaMnN layers Journal of Crystal Growth. VOL 278(NUMBER 1-4), 685-689 ANDRIANOV, A. V., NOVIKOV, S. V., ZHURAVLEV, I. S., LI, T., XIA, R., BULL, S., HARRISON, I., LARKINS, E. C. and FOXON, C. T., 2005. Efficient Near IR Photoluminescence from Gallium Nitride Layers Doped with Arsenic Semiconductors. VOL 39(NUMB 1), 73-76 IBANEZ, J., PASTOR, D., CUSCO, R., ARTUS, L., AVELLA, M., JIMENEZ, J., NOVIKOV, S. V. and FOXON, C. T., 2005. Optical characterisation of Bi-doped GaN films grown by molecular beam epitaxy Physica Status Solidi (A) - Applications and Materials Science. VOL 202(NUMB 5), 850-853 EDMONDS, K.W., BOGUSLAWSKI, P., WANG, K.Y., CAMPION, R.P., NOVIKOV, S.V., FARLEY, N.R., GALLAGHER, B.L., FOXON, C.T., SAWICKI, M., DIETL, T., NARDELLI, M.B. and BERNHOLC, J., 2005. Comment on "Mn interstitial diffusion in (Ga,Mn)As'' - Reply Physical Review Letters. 94(13), EDMONDS, K.W., BOGUSLAWSKI, P., WANG, K.Y., CAMPION, R.P., NOVIKOV, S.V., FARLEY, N.R., GALLAGHER, B.L., FOXON, C.T., SAWICKI, M., DIETL, T., NARDELLI, M.B. and BERNHOLC, J., 2005. Comment on "Mn interstitial diffusion in (Ga,Mn)As'' - Reply Physical Review Letters. 94(13), art. 139702 ANDRIANOV, AV, NOVIKOV, SV, ZHURAVLEV, IS, LI, T, XIA, R, BULL, S, HARRISON, I, LARKINS, EC and FOXON, CT, 2005. Efficient Near Ir Photoluminescence From Gallium Nitride Layers Doped With Arsenic Semiconductors. 39(1), 73-76 EDMONDS, KW, BOGUSLAWSKI, P, WANG, KY, CAMPION, RP, NOVIKOV, SV, FARLEY, NRS, GALLAGHER, BL, FOXON, CT, SAWICKI, M, DIETL, T, NARDELLI, MB and BERNHOLC, J, 2005. Comment On "Mn Interstitial Diffusion In (Ga,Mn)As'' - Reply
IBANEZ, J, PASTOR, D, CUSCO, R, ARTUS, L, AVELLA, M, JIMENEZ, J, NOVIKOV, SV and FOXON, CT, 2005. Optical Characterisation Of Bi-Doped Gan Films Grown By Molecular Beam Epitaxy FOXON, CT, NOVIKOV, SV, ZHAO, L, EDMONDS, KW, GIDDINGS, AD, WANG, KY, CAMPION, RP, STADDON, CR, FAY, MW, HAN, Y, BROWN, PD, SAWICKI, M and GALLAGHER, BL, 2005. Molecular Beam Epitaxy Of P-Type Cubic Gamnn Layers EDMONDS, KW, NOVIKOV, SV, SAWICKI, M, CAMPION, RP, STADDON, CR, GIDDINGS, AD, ZHAO, LX, WANG, KY, DIETL, T, FOXON, CT and GALLAGHER, BL, 2005. P-Type Conductivity In Cubic (Ga,Mn)N Thin Films Applied Physics Letters. 86(15), - MARTINEZ, CE, STANTON, NM, WALKER, PM, KENT, AJ, NOVIKOV, SV and FOXON, CT, 2005. Generation Of Terahertz Monochromatic Acoustic Phonon Pulses By Femtosecond Optical Excitation Of A Gallium Nitride/Aluminium Nitride Superlattice Applied Physics Letters. 86(22), - NOVIKOV, SV, EDMONDS, KW, ZHAO, LX, GIDDINGS, AD, WANG, KY, CAMPION, RP, STADDON, CR, FAY, MW, HAN, Y, BROWN, PD, SAWICKI, M, GALLAGHER, BL and FOXON, CT, 2005. Mn Doping And P-Type Conductivity In Zinc-Blende Gamnn Layers Grown By Molecular Beam Epitaxy FAY, MW, HAN, Y, BROWN, PD, NOVIKOV, SV, EDMONDS, KW, CAMPION, RP, GALLAGHER, BL and FOXON, CT, 2005. Structural Characterization Of Zincblende Ga1-Xmnxn Epilayers Grown By Molecular Beam Epitaxy On (001) Gaas Substrates Applied Physics Letters. 87(3), - HAN, Y, FAY, MW, BROWN, PD, NOVIKOV, S, EDMONDS, KW, GALLAGHER, BL, CAMPION, RP, STADDON, CR and FOXON, CT, 2005. Structural Characterisation Of Zinc-Blende Ga1-Xmnxn Epilayers Grown By Mbe As A Function Of Ga Flux Journal Of Crystal Growth. 284(3-4), 324-334 MARTINEZ, C. E., STANTON, N. M., KENT, A. J., STADDON, C. R., NOVIKOV, S. V. and FOXON, C. T., 2004. Influence of internal fields on radiative and nonradiative processes in AlN/GaN superlattices Journal of Applied Physics. VOL 95(PART 12), 7785-7789 NOVIKOV, S.V., EDMONDS, K.W., GIDDINGS, A.D., WANG, K.Y., STADDON, C.R., CAMPION, R.P., GALLAGHER, B.L. and FOXON, C.T., 2004. P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy Semiconductor Science and Technology. 19(3), L13-L16 BELYAEV, A. E., MAKAROVSKY, O., WALKER, D. J., EAVES, L., FOXON, C. T., NOVIKOV, S. V., ZHAO, L. X., DYKEMAN, R. I., DANYLYUK, S. V. and VITUSEVICH, S. A., 2004. Resonance and current instabilities in AlN/GaN resonant tunnelling diodes Physica E - Low-Dimensional Systems & Nanostructures. VOL 21(NUMBER 2-4), 752-755 FAY,M.W., HARRISON,I., LARKINS,E.C., NOVIKOV,S.V., FOXON,C.T. and BROWN,P.D., 2004. Electron Microscopy And Analysis 2003 Electron Microscopy and Analysis 2001: Electron Microscopy and analysis. 179, 23-26
EDMONDS, KW, BOGUSLAWSKI, P, WANG, KY, CAMPION, RP, NOVIKOV, SN, FARLEY, NRS, GALLAGHER, BL, FOXON, CT, SAWICKI, M, DIETL, T, NARDELLI, MB and BERNHOLC, J, 2004. Mn Interstitial Diffusion In (Ga,Mn)As Physical Review Letters. 92(3), - SAVELIEV, IG, BYKANOV, DD, NOVIKOV, SV, POLYANSKAYA, TA and RUDA, H, 2004. Electron Phase And Spin Decoherence In The Vicinity Of The Second Subband Edge In An Asymmetrical Quantum Well Journal Of Physics-Condensed Matter. 16(4), 641-650 NOVIKOV, SV, EDMONDS, KW, GIDDINGS, AD, WANG, KY, STADDON, CR, CAMPION, RP, GALLAGHER, BL and FOXON, CT, 2004. P-Type Conductivity In Cubic Gamnn Layers Grown By Molecular Beam Epitaxy Semiconductor Science And Technology. 19(3), L13-L16 BELYAEV, AE, MAKAROVSKY, O, WALKER, DJ, EAVES, L, FOXON, CT, NOVIKOV, SV, ZHAO, LX, DYKEMAN, RI, DANYLYUK, SV, VITUSEVICH, SA, KAPPERS, MJ, BARNARD, JS and HUMPHREYS, CJ, 2004. Resonance And Current Instabilities In Aln/Gan Resonant Tunnelling Diodes MARTINEZ, CE, STANTON, NM, KENT, AJ, STADDON, CR, NOVIKOV, SV and FOXON, CT, 2004. Influence Of Internal Fields On Radiative And Nonradiative Processes In Aln/Gan Superlattices Journal Of Applied Physics. 95(12), 7785-7789 FAY, MW, HARRISON, I, LARKINS, EC, NOVIKOV, SV, FOXON, CT and BROWN, PD, 2004. Tem Assessment Of As-Doped Gan Epitaxial Layers Grown On Sapphire
NOVIKOV, S. V., WINSER, A. J., LI, T., CAMPION, R., HARRISON, I. and FOXON, C. T., 2003. Bismuth a new dopant for GaN films grown by molecular beam epitaxy-surfactant effects, formation of GaN1-xBix alloys and co-doping with arsenic Journal of Crystal Growth. VOL 247(NUMBER 1-2), 35-41 ANDRIANOV, A. V., NOVIKOV, S. V., LI, T., XIA, R., BULL, S., HARRISON, I., LARKINS, E. C. and FOXON, C. T., 2003. Photoluminescence from self-assembled GaAs inclusions embedded in a GaN host crystal Physica Status Solidi B: Basic Research. VOL 238(PART 1), 204-212 FOXON, C. T., NOVIKOV, S. V., LI, T., CAMPION, R. P., WINSER, A. J., HARRISON, I., KAPPERS, M. J. and HUMPHREYS, C. J., 2003. Arsenic incorporation in GaN during growth by molecular beam epitaxy Journal of Crystal Growth. VOL 251(NUMBER 1-4), 510-514 NOVIKOV, S. V., ZHAO, L. X., HARRISON, I. and FOXON, C. T., 2003. Isoelectronic doping of AlGaN alloys Physica Status Solidi B: Basic Research. VOL 240(PART 2), 408-411 ANDRIANOV, A. V., NOVIKOV, S. V., LI, T., ZHURAVLEV, I. S., HARRISON, I., LARKINS, E. C. and FOXON, C. T., 2003. Study of photoluminescence from self-formed GaAs nanocrystallites in As-doped GaN grown by molecular beam epitaxy Semiconductor Science and Technology. VOL 18(PART 11), 997-1000 FOXON, C. T., NOVIKOV, S. V., ZHAO, L. X. and HARRISON, I., 2003. Isoelectronic doping of AlGaN alloys with As and estimates of AlGaN/GaN band offsets Applied Physics Letters. VOL 83(PART 6), 1166-1168 BELYAEV, A. E., FOXON, C. T., NOVIKOV, S. V., MAKAROVSKY, O., EAVES, L., KAPPERS, M. J. and HUMPHREYS, C. J., 2003. Comment on "AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy" [Appl. Phys. Lett. 81, 1729 (2002)] Applied Physics Letters. VOL 83(PART 17), 3626-3627 NOVIKOV, SV, WINSER, AJ, LI, T, CAMPION, R, HARRISON, I and FOXON, CT, 2003. Bismuth A New Dopant For Gan Films Grown By Molecular Beam Epitaxy-Surfactant Effects, Formation Of Gan1-Xbix Alloys And Co-Doping With Arsenic Journal Of Crystal Growth. 247(1-2), 35-41 FOXON, CT, NOVIKOV, SV, LI, T, CAMPION, RP, WINSER, AJ, HARRISON, I, KAPPERS, MJ and HUMPHREYS, CJ, 2003. Arsenic Incorporation In Gan During Growth By Molecular Beam Epitaxy ANDRIANOV, AV, NOVIKOV, SV, LI, T, XIA, R, BULL, S, HARRISON, I, LARKINS, EC and FOXON, CT, 2003. Photoluminescence From Self-Assembled Gaas Inclusions Embedded In A Gan Host Crystal Physica Status Solidi B-Basic Research. 238(1), 204-212 FOXON, CT, NOVIKOV, SV, ZHAO, LX and HARRISON, I, 2003. Isoelectronic Doping Of Algan Alloys With As And Estimates Of Algan/Gan Band Offsets Applied Physics Letters. 83(6), 1166-1168 BELYAEV, AE, FOXON, CT, NOVIKOV, SV, MAKAROVSKY, O, EAVES, L, KAPPERS, MJ and HUMPHREYS, CJ, 2003. Comment On "Aln/Gan Double-Barrier Resonant Tunneling Diodes Grown By Rf-Plasma-Assisted Molecular-Beam Epitaxy" [Appl. Phys. Lett. 81, 1729 (2002)] ANDRIANOV, AV, NOVIKOV, SV, LI, T, ZHURAVLEV, IS, HARRISON, I, LARKINS, EC and FOXON, CT, 2003. Study Of Photoluminescence From Self-Formed Gaas Nanocrystallites In As-Doped Gan Grown By Molecular Beam Epitaxy Semiconductor Science And Technology. 18(11), 997-1000 CAVILL, S. A., AKIMOV, A. V., STANTON, N. M., KENT, A. J., NOVIKOV, S. V., HARRISON, I. and FOXON, C. T., 2002. Nonradiative processes and phonon emission in GaAsN alloys Physica B - Physics of Condensed Matter. VOL 316-317, 114-117 FOXON, C. T., HARRISON, I., NOVIKOV, S. V., LI, T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., WINSER, A. J., KOVARSKY, A. P. and BER, B. J., 2002. The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules Journal of Crystal Growth. VOL 234(NUMBER 2-3), 343-348 NOVIKOV, S. V., WINSER, A. J., BELL, A., HARRISON, I., LI, T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., PONCE, F. A. and FOXON, C. T., 2002. The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy Journal of Crystal Growth. VOL 240(NUMBER 3-4), 423-430 FOXON, C. T., NOVIKOV, S. V., LI, T., CAMPION, R. P., WINSER, A. J. and HARRISON, I., 2002. Optimisation of the Blue Emission from As-Doped GaN Films Grown by Molecular Beam Epitaxy Physica Status Solidi A: Applied Research. VOL 192(NO 1), 39-43 LI, T., STADDON, C. R., NOVIKOV, S. V., FEWSTER, P. F., WIDDOWSON, A., ANDREW, N. L., KIDD, P., HARRISON, I., WINSER, A. and LIAO, Y., 2002. X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. VOL 235(NUMBER 1-4), 103-110 FOXON, C. T., NOVIKOV, S. V., LI, T., CAMPION, R. P., WINSER, A. J. and HARRISON, I., 2002. Bismuth a New Surfactant or Contact for GaN Films Grown by Molecular Beam Epitaxy Physica Status Solidi A: Applied Research. VOL 192(NO 2), 441-445 FOXON, C. T., NOVIKOV, S. V., LI, T., CAMPION, R. P., DAVIS, C. S., WINSER, A. J., HARRISON, I. and LIAO, Y., 2002. Strong blue emission from GaN isoelectronically doped with arsenic Materials Science and Engineering B: Solid-State Materials for Advanced Technology. VOL 93(NO 1-3), 35-38 FOXON, C. T., HARRISON, I., NOVIKOV, S. V., WINSER, A. J., CAMPION, R. P. and LI, T., 2002. The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy Journal of Physics: Condensed Matter. VOL 14(PART 13), 3383-3398 BROWN, PD, FAY, M, BOCK, N, MARLAFEKA, S, CHENG, TS, NOVIKOV, SV, DAVIS, CS, CAMPION, RP and FOXON, CT, 2002. Structural Characterisation Of Al Grown On Group Iii-Nitride Layers And Sapphire By Molecular Beam Epitaxy Journal Of Crystal Growth. 234(2-3), 384-390 FOXON, CT, HARRISON, I, NOVIKOV, SV, LI, T, CAMPION, RP, STADDON, CR, DAVIS, CS, WINSER, AJ, KOVARSKY, AP and BER, BJ, 2002. The Influence Of Arsenic Incorporation On The Optical Properties Of As-Doped Gan Films Grown By Molecular Beam Epitaxy Using As-4 Molecules Journal Of Crystal Growth. 234(2-3), 343-348 LI, T, STADDON, CR, NOVIKOV, SV, FEWSTER, PF, WIDDOWSON, A, ANDREW, NL, KIDD, P, HARRISON, I, WINSER, A, LIAO, Y and FOXON, CT, 2002. X-Ray Studies Of As-Doped Gan Grown By Plasma-Assisted Molecular Beam Epitaxy Journal Of Crystal Growth. 235(1-4), 103-110 TRAGER-COWAN, C, SWEENEY, F, HASTIE, J, MANSON-SMITH, SK, COWAN, DA, MCCOLL, D, MOHAMMED, A, O'DONNELL, KP, ZUBIA, D, HERSEE, SD, FOXON, CT, HARRISON, I and NOVIKOV, SV, 2002. Characterization Of Nitride Thin Films By Electron Backscatter Diffraction
FOXON, CT, HARRISON, I, NOVIKOV, SV, WINSER, AJ, CAMPION, RP and LI, T, 2002. The Growth And Properties Of Gan: As Layers Prepared By Plasma-Assisted Molecular Beam Epitaxy Journal Of Physics-Condensed Matter. 14(13), 3383-3397 NOVIKOV, SV, WINSER, AJ, BELL, A, HARRISON, I, LI, T, CAMPION, RP, STADDON, CR, DAVIS, CS, PONCE, FA and FOXON, CT, 2002. The Transition From As-Doped Gan, Showing Blue Emission, To Ganas Alloys In Films Grown By Molecular Beam Epitaxy Journal Of Crystal Growth. 240(3-4), 423-430 FOXON, CT, NOVIKOV, SV, LI, T, CAMPION, RP, DAVIS, CS, WINSER, AJ, HARRISON, I and LIAO, Y, 2002. Strong Blue Emission From Gan Isoelectronically Doped With Arsenic CAVILL, SA, AKIMOV, AV, STANTON, NM, KENT, AJ, NOVIKOV, SV, HARRISON, I and FOXON, CT, 2002. Nonradiative Processes And Phonon Emission In Gaasn Alloys FOXON, CT, NOVIKOV, SV, LI, T, CAMPION, RP, WINSER, AJ and HARRISON, I, 2002. Optimisation Of The Blue Emission From As-Doped Gan Films Grown By Molecular Beam Epitaxy
FOXON, CT, NOVIKOV, SV, LI, T, CAMPION, RP, WINSER, AJ and HARRISON, I, 2002. Bismuth A New Surfactant Or Contact For Gan Films Grown By Molecular Beam Epitaxy
BYKANOV, DD, NOVIKOV, SV, POLYANSKAYA, TA and SAVEL'EV, IG, 2002. Weak Antilocalization And Spin-Orbit Interaction In A In0.53Ga0.47As/Inp Quantum Well In The Persistent Photoconductivity State Semiconductors. 36(12), 1389-1397
NOVIKOV, S.V., WINSER, A.J., HARRISON, I., DAVIS, C.S. and FOXON, C.T., 2001. A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride Semiconductor Science and Technology. 16(2), 103-106 FOXON, C. T., NOVIKOV, S. V., CAMPION, R. P., DAVIS, C. S., CHENG, T. S., WINSER, A. J. and HARRISON, I., 2001. Growth of GaNAs films by molecular beam epitaxy Journal of Crystal Growth. VOLS 227-228, 486-490 HARRISON, I., NOVIKOV, S. V., LI, T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., LIAO, Y., WINSER, A. J. and FOXON, C. T., 2001. On the Origin of Blue Emission from As-Doped GaN Physica Status Solidi B: Basic Research. VOL 228(PART 1), 213-217 NOVIKOV, S. V., LI, T., WINSER, A. J., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., HARRISON, I. and FOXON, C. T., 2001. Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga-N-As System Physica Status Solidi B: Basic Research. VOL 228(NO 1), 223-225 WINSER, A. J., HARRISON, I., NOVIKOV, S. V., DAVIS, C. S., CAMPION, R., CHENG, T. S. and FOXON, C. T., 2001. Blue emission from arsenic doped gallium nitride Journal of Crystal Growth. VOL 230(NUMBER 3-4), 527-532 FOXON, C. T., NOVIKOV, S. V., LIAO, Y., WINSER, A. J., HARRISON, I., LI, T., CAMPION, R. P., STADDON, C. R. and DAVIS, C. S., 2001. The Transition from Blue Emission in As-Doped GaN to GaNAs Alloys in Layers Grown by Molecular Beam Epitaxy Physica Status Solidi B: Basic Research. VOL 228(NO 1), 203-206 NOVIKOV, S. V., LI, T., WINSER, A. J., FOXON, C. T., CAMPION, R. P., STADDON, C. R., DAVIS, C. S., HARRISON, I., KOVARSKY, A. P. and BER, B. J., 2001. The Influence of Arsenic Incorporation on the Optical Properties of As-Doped GaN Films Grown by Molecular Beam Epitaxy Using Arsen Physica Status Solidi B: Basic Research. VOL 228(NO 1), 227-229 FOXON, C. T., NOVIKOV, S. V., CAMPION, R. P., LIAO, Y., WINSER, A. J. and HARRISON, I., 2001. The Influence of As on the Optimum Nitrogen to Gallium Ratio Required to Grow High Quality GaN Films by Molecular Beam Epitaxy Physica Status Solidi B: Basic Research. VOL 228(NO 1), 219-222 GIL, B., MOREL, A., TALIERCIO, T., LEFEBVRE, P., FOXON, C. T., HARRISON, I., WINSER, A. J. and NOVIKOV, S. V., 2001. Carrier relaxation dynamics for As defects in GaN Applied Physics Letters. VOL 79(PART 1), 69-71 BELL, A., PONCE, F. A., NOVIKOV, S. V., FOXON, C. T. and HARRISON, I., 2001. Spatially Resolved Cathololuminescence Study of As Doped GaN Physica Status Solidi B: Basic Research. VOL 228(PART 1/2), 207-211 BELL, A., PONCE, F. A., NOVIKOV, S. V., FOXON, C. T. and HARRISON, I., 2001. The nature of arsenic incorporation in GaN Applied Physics Letters. VOL 79(PART 20), 3239-3241 SWEENEY, E., TRAGER-COWAN, C., HASTIE, J., COWAN, D. A., O DONNELL, K. P., ZUBIA, D., HERSEE, S. D., FOXON, C. T., HARRISON, I. and NOVIKOV, S. V., 2001. Electron Backscattered Diffraction Patterns from Cooled Gallium Nitride Thin Films Physica Status Solidi B: Basic Research. VOL 228(NO 2), 533-536 DAVIS, C. S., NOVIKOV1, S. V., CHENG, T. S., CAMPION, R. P. and FOXON, C. T., 2001. Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire Journal of Crystal Growth. VOL 226(NUMBER 2-3), 203-208 BELL, A, PONCE, FA, NOVIKOV, SV, FOXON, CT and HARRISON, I, 2001. Spatially Resolved Cathodoluminescence Study Of As Doped Gan
FOXON, CT, NOVIKOV, SV, LIAO, Y, WINSER, AJ, HARRISON, I, LI, T, CAMPION, RP, STADDON, CR and DAVIS, CS, 2001. The Transition From Blue Emission In As-Doped Gan To Ganas Alloys In Layers Grown By Molecular Beam Epitaxy
SWEENEY, F, TRAGER-COWAN, C, HASTIE, J, COWAN, DA, O'DONNELL, KP, ZUBIA, D, HERSEE, SD, FOXON, CT, HARRISON, I and NOVIKOV, SV, 2001. Electron Backscattered Diffraction Patterns From Cooled Gallium Nitride Thin Films
BELL, A., HARRISON, I., CHENG, T. S., KORAKAKIS, D., FOXON, C. T., NOVIKOV, S., BER, B. Y. and KUDRIAVTSEV, Y. A., 2000. An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy Semiconductor Science and Technology. VOL 15(PART 8), 789-793 WINSER, A. J., NOVIKOV, S. V., DAVIS, C. S., CHENG, T. S., FOXON, C. T. and HARRISON, I., 2000. Strong blue emission from As doped GaN grown by molecular beam epitaxy Applied Physics Letters. VOL 77(PART 16), 2506-2508 BLANT, A. V., HUGHES, O. H., CHENG, T. S., NOVIKOV, S. V. and FOXON, C. T., 2000. Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN Plasma Sources Science and Technology. VOL 9(PART 1), 12-17 CHERKASHIN, N. A., BERT, N. A., MUSIKHIN, Y. G., NOVIKOV, S. V., CHENG, T. S. and FOXON, C. T., 2000. TEM Structural Studies of Undoped and Si-doped GaN Grown on Al~2O~3 Substrate Semiconductors. VOL 34(PART 8), 867-871 BELL, A, HARRISON, I, CHENG, TS, KORAKAKIS, D, FOXON, CT, NOVIKOV, S, BER, BY and KUDRIAVTSEV, YA, 2000. An Investigation Into The Origin Of The 3.424 Ev Peak In The Low-Temperature Photoluminescence Of Gan Grown By Molecular Beam Epitaxy Semiconductor Science And Technology. 15(8), 789-793 BLANT, A.V., NOVIKOV, S.V., CHENG, T.S., FLANNERY, L.B., HARRISON, I., CAMPION, R.P., KORAKAKIS, D., LARKINS, E.C., KRIBES, Y. and FOXON, C.T., 1999. Ga-metal inclusions in GaN grown on sapphire Journal of Crystal Growth. VOL 203(NUMBER 3), 349-354 CHENG, T. S., NOVIKOV, S. V., LEBEDEV, V. B., CAMPION, R. P., JEFFS, N. J., MELNIK, Y. V., TSVETKOV, D. V., STEPANOV, S. I., CHERENKOV, A. E. and DMITRIEV, V. A., 1999. The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates Journal of Crystal Growth. VOL 197(ISSUE 1-2), 12-18 FOXON, C. T., CHENG, T. S., KORAKAKIS, D., NOVIKOV, S. V., CAMPION, R. P., GRZEGORY, I., POROWSKI, S., ALBRECHT, M. and STRUNK, H. P., 1999. Homoepitaxial and Heteroepitaxial Gallium Nitride Grown by Molecular Beam Epitaxy Materials Research Society Symposium Proceedings. VOL 537, 4.11.1
FOXON, C.T., DAVIS, C.S., NOVIKOV, S.V., HUGHES, O.H., CHENG, T.S., KORAKAKIS, D., JEFFS, N.J., GRZEGORY, I. and POROWSKI, S., 1999. RHEED studies of group III-nitrides grown by MBE Physica Status Solidi A: Applied Research. 176(1), 723-726 CHENG, T. S., NOVIKOV, S. V., FOXON, C. T. and ORTON, J. W., 1999. Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy Solid State Communications. VOL 109(NUMBER 7), 439-444 FOXON, C.T., CHENG, T.S., NOVIKOV, S.V., JEFFS, N.J., HUGHES, O.H., MELNIK, Y.V., NIKOLAEV, A.E. and DMITRIEV, V.A., 1999. Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy Surface Science. 421(3), 377-385 ORTON, J.W., FOXON, C.T., CHENG, T.S., HOOPER, S.E., NOVIKOV, S.V., BER, B.Y. and KUDRIAVTSEV, Y.A., 1999. Incorporation of Mg in GaN grown by molecular beam epitaxy Journal of Crystal Growth. 197(1-2), 7-11 FOXON, C.T., CHENG, T.S., NOVIKOV, S.V., KORAKAKIS, D., JEFFS, N.J., GRZEGORY, I. and POROWSKI, S., 1999. Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals Journal of Crystal Growth. VOL 207(NUMBER 1), 1-7 HUGHES, O.H., CHENG, T.S., NOVIKOV, S.V., FOXON, C.T., KORAKAKIS, D. and JEFFS, N.J., 1999. RHEED studies of the GaN surface during growth by molecular beam epitaxy Journal of Crystal Growth. VOL 201-202(NUMBER 2-3), 388-391 LEVANDER, A. X., NOVIKOV, S. V., LILIENTAL-WEBER, Z., DOS REIS, R., DUBON, O. D., WU, J., FOXON, C. T., YU, K. M. and WALUKIEWICZ, W., Doping of GaN1-xAsx with high As content JOURNAL OF APPLIED PHYSICS. 110(9), KUDRAWIEC, R., KOPACZEK, J., SITAREK, P., MISIEWICZ, J., HENINI, M. and NOVIKOV, S. V., Unusual broadening of E-0 and E-0 + Delta(SO) transitions in GaAsBi studied by electromodulation spectroscopy JOURNAL OF APPLIED PHYSICS. 111(6), NOVIKOV, S. V., YU, K. M., LEVANDER, A. X., LILIENTAL-WEBER, Z., DOS REIS, R., KENT, A. J., TSENG, A., DUBON, O. D., WU, J., DENLINGER, J., WALUKIEWICZ, W., LUCKERT, F., EDWARDS, P. R., MARTIN, R. W. and FOXON, C. T., Molecular beam epitaxy of GaN1-xBix alloys with high bismuth content PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 209(3), 419-423 YU, K. M., NOVIKOV, S. V., BROESLER, R., LEVANDER, A. X., LILIENTAL-WEBER, Z., LUCKERT, F., MARTIN, R. W., DUBON, O., WU, J., WALUKIEWICZ, W. and FOXON, C. T., GaNAs alloys over the whole composition range grown on crystalline and amorphous substrates PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8. 8(7-8), NOVIKOV, S. V. and FOXON, C. T., Plasma-assisted electroepitaxy of GaN layers from the liquid Ga melt JOURNAL OF CRYSTAL GROWTH. 354(1), 44-48 NOVIKOV, S. V., STADDON, C. R., POWELL, R. E. L., AKIMOV, A. V., KENT, A. J. and FOXON, C. T., Plasma-assisted electroepitaxy as a novel method for the growth of GaN layers PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4. 9(3-4), 538-541 LEVANDER, A. X., LILIENTAL-WEBER, Z., BROESLER, R., HAWKRIDGE, M. E., NOVIKOV, S. V., FOXON, C. T., DUBON, O. D., WU, J., WALUKIEWICZ, W. and YU, K. M., Thermal stability of amorphous GaN1-xAsx alloys APPLIED PHYSICS LETTERS. 98(16), NOVIKOV, S. V., STADDON, C. R., POWELL, R. E. L., AKIMOV, A. V., LUCKERT, F., EDWARDS, P. R., MARTIN, R. W., KENT, A. J. and FOXON, C. T., Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH. 322(1), 23-26 NOVIKOV, S. V., STADDON, C. R., FOXON, C. T., YU, K. M., BROESLER, R., HAWKRIDGE, M., LILIENTAL-WEBER, Z., DENLINGER, J., DEMCHENKO, I., LUCKERT, F., EDWARDS, P. R., MARTIN, R. W. and WALUKIEWICZ, W., Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices JOURNAL OF CRYSTAL GROWTH. 323(1), 60-63 NOVIKOV, S. V., STADDON, C. R., LUCKERT, F., EDWARDS, P. R., MARTIN, R. W., KENT, A. J. and FOXON, C. T., Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH. 350(1), 80-84 NOVIKOV, S. V., STADDON, C. R., KENT, A. J. and FOXON, C. T., Plasma-assisted electroepitaxy as a method for the growth of GaN layers JOURNAL OF CRYSTAL GROWTH. 316(1), 51-55 LEVANDER, ALEJANDRO X., NOVIKOV, SERGEI V., LILIENTAL-WEBER, ZUZANNA, DOS REIS, ROBERTO, DENLINGER, JONATHAN D., WU, JUNQIAO, DUBON, OSCAR D., FOXON, C. T., YU, KIN M. and WALUKIEWICZ, WLADEK, Growth and transport properties of p-type GaNBi alloys JOURNAL OF MATERIALS RESEARCH. 26(23), 2887-2894 ZAINAL, N., NOVIKOV, S. V., AKIMOV, A. V., STADDON, C. R., FOXON, C. T. and KENT, A. J., Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN PHYSICA B-CONDENSED MATTER. 407(15), 2964-2966 NOVIKOV, S. V., FOXON, C. T. and KENT, A. J., Zinc-blende (cubic) GaN bulk crystals grown by molecular beam epitaxy PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5. 8(5), LILIENTAL-WEBER, Z., DOS REIS, R., LEVANDER, A., YU, K. M., WALUKIEWICZ, W., NOVIKOV, S. V. and FOXON, C. T., Wurtzite-to amorphous-to cubic phase transition of GaN1-xAsx alloys with increasing As content ELECTRON MICROSCOPY XIV. 186, 74-77 NOVIKOV, S. V., STADDON, C. R., FOXON, C. T., LUCKERT, F., EDWARDS, P. R., MARTIN, R. W. and KENT, A. J., Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals JOURNAL OF CRYSTAL GROWTH. 323(1), 80-83 LILIENTAL-WEBER, Z., DOS REIS, R., LEVANDER, A. X., YU, K. M., WALUKIEWICZ, W., NOVIKOV, S. V. and FOXON, C. T., Microstructure of GaN1-xBix JOURNAL OF ELECTRONIC MATERIALS. 42(1), 26-32 POWELL, R. E. L., NOVIKOV, S. V., LUCKERT, F., EDWARDS, P. R., AKIMOV, A. V., FOXON, C. T., MARTIN, R. W. and KENT, A. J., Carrier localization and related photoluminescence in cubic AlGaN epilayers JOURNAL OF APPLIED PHYSICS. 110(6),